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| R6020ANX Transistors 10V Drive Nch MOSFET R6020ANX Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 15.0 12.0 8.0 2.5 1.3 1.2 14.0 0.8 (1)Base (2)Collector (3)Emitter 2.54 (1) (2) (3) 2.54 0.75 2.6 Applications Switching Packaging specifications Package Code Type Basic ordering unit (pieces) Bulk - 500 1 Inner circuit R6020ANX Absolute maximum ratings (Ta=25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25C) Channel temperature Range of storage temperature 1 Pw10s, Duty cycle1% 2 L 500H, VDD=50V, RG=25, Starting, Tch=25C 3 Limited only by maximum tempterature allowed Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg 3 1 3 1 2 2 Limits 600 30 20 80 20 80 10 26.7 50 150 -55 to +150 Unit V V A A A A A mJ W C C (1) (1) Gate (2) Drain (3) Source (2) (3) 1 Body Diode 1/5 R6020ANX Transistors Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 2.5 Unit C/W Electrical characteristics (Ta=25 C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Min. - 600 - 2.5 - 7 - - - - - - - - - - Typ. - - - - 0.17 - 2040 1660 70 40 60 230 70 65 10 25 Max. 100 - 100 4.5 0.22 - - - - - - - - - - - Unit nA V A V S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V ID=10A, VDS=10V VDS=25V VGS=0V f=1MHz ID=10A, VDD 300V VGS=10V RL=30 RG=10 VDD 300V ID=20A VGS=10V RL=15 / RG=10 Body diode characteristics (Source-drain) (Ta=25 C) Parameter Forward voltage Pulsed Symbol VSD Min. - Typ. - Max. 1.5 Unit V Conditions IS= 10A, VGS=0V 2/5 R6020ANX Transistors Electrical characteristic curves 100 Operation in this area is limited by RDS(ON) PW =100us DRAIN CURRENT: ID (A) PW =1ms PW = 10ms 1 DC operation 0.1 Ta = 25C Single Pulse 0.01 0.1 1 10 100 1000 40 35 30 25 20 15 10 5 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.2: Typical Output Characteristics( ) 5.0V VGS= 4.5V 0 0 1 2 3 4 5 5.5V 20 10V 7.0V 6.5V 6.0V 8.0V Ta= 25C Pulsed DRAIN CURRENT: ID (A) 15 Ta= 25C Pulsed 10V 8.0V 7.0V 6.5V 10 6.0V 5.0V 5 VGS= 4.5V 5.5V DRAIN CURRENT : ID (A) 10 DRAIN-SOURCE VOLTAGE : VDS ( V ) Fig.1 Maximum Safe Operating Aera DRAIN-SOURCE VOLTAGE: VDS (V) Fig.3: Typical Output Characteristics( ) 100 6 GATE THRESHOLD VOLTAGE: VGS(th) (V) 5 4 3 2 1 0 -50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ( ) VDS= 10V Pulsed VDS= 10V ID = 1mA 10 VGS= 10V Pulsed 1 DRAIN CURRENT : ID (A) 10 Ta= 125C Ta= 75C 1 Ta= 25C Ta= -25C 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= -25C 0.01 0.1 1 10 100 0.1 0.01 0 1 2 3 4 5 6 7 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics 0 50 100 150 0.01 0.001 CHANNEL TEMPERATURE: Tc h (C) Fig.5 Gate Threshold Voltage vs. Channel Temperature DRAIN CURRENT : ID (A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 0.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) ( ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) ( ) Ta=25C Pulsed 0.4 0.5 0.4 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) VGS= 10V Pulsed 100 VDS= 10V Pulsed 10 0.3 ID =20A 0.2 ID =10A 0.1 0.3 ID = 20A 1 0.2 ID = 10A 0.1 0.1 0.01 Ta= -25C Ta= 25C Ta= 75C Ta= 125C 0 0 5 10 15 0 -50 0 50 100 150 0.001 0.001 0.01 0.1 1 10 100 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source CHANNEL TEMPERATURE: Tch (C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current 3/5 R6020ANX Transistors 100 REVERSE DRAIN CURRENT : IDR (A) VGS= 0V Pulsed CAPACITANCE : C (pF) 10 Ta= 125C Ta= 75C Ta= 25C Ta= -25C 10000 GATE-SOURCE VOLTAGE : VGS (V) 15 Ta= 25C VDD = 300V ID = 20A R G= 10 Pulsed 1000 C os s 100 C rs s C is s 10 1 5 0.1 10 Ta= 25C f= 1MHz VGS= 0V 0.01 0.1 1 10 100 1000 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage 0 0 10 20 30 40 50 60 70 TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics 1000 REVERSE RECOVERY TIME: trr (ns) 10000 tf SWITCHING TIME : t (ns) 1000 td(off) 100 Ta= 25C VDD = 300V VGS= 10V R G= 10 Pulsed 100 Ta= 25C di / dt= 100A / s VGS= 0V Pulsed 10 0.1 1 10 100 10 tr 1 0.01 0.1 1 td(on) 10 100 REVERSE DRAIN CURRENT : IDR (A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current DRAIN CURRENT : ID (A) Fig.14 Switching Characteristics 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta = 25C Single Pulse : 1Unit Rth ch-a t = t xRth ch-a Rth ch-a = 49.7 C/W 1 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 4/5 R6020ANX Transistors Switching characteristics measurement circuit Fig.1 Switching time measurement circuit Fig.2 Switching waveforms IG(Const.) Fig.3 Gate charge measurement circuit Fig.4 Gate charge waveform Fig.5 Avalanche measurement circuit Fig.6 Avalanche waveform 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0 |
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